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	Tunable electronic properties of an Sb/InSe van der Waals heterostructure by electric field effects
	Zhang, Zhihui; Zhang, Yan; Xie, Zifeng; Wei, Xing; Guo, Tingting; Fan, Jibin; Ni, Lei; Tian, Ye; Liu, Jian; Duan, Li
刊名	PHYSICAL CHEMISTRY CHEMICAL PHYSICS
	2019
卷号	21期号:10页码:5627-5633
DOI	10.1039/c8cp07407k
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4540321
专题	山东大学
作者单位	Changan Univ, Sch Mat Sci & Engn, Xian 710064, Shaan
推荐引用方式 GB/T 7714	Zhang, Zhihui,Zhang, Yan,Xie, Zifeng,et al. Tunable electronic properties of an Sb/InSe van der Waals heterostructure by electric field effects[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2019,21(10):5627-5633.
APA	Zhang, Zhihui.,Zhang, Yan.,Xie, Zifeng.,Wei, Xing.,Guo, Tingting.,...&Duan, Li.(2019).Tunable electronic properties of an Sb/InSe van der Waals heterostructure by electric field effects.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,21(10),5627-5633.
MLA	Zhang, Zhihui,et al."Tunable electronic properties of an Sb/InSe van der Waals heterostructure by electric field effects".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 21.10(2019):5627-5633.

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