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	Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics
	Liu, Xueyu; Liu, Pengbo; Huang, Hui; Chen, Changxin; Jin, Tiening; Zhang, Yafei; Huang, Xianliang; Jin, Zhiyuan; Li, Xiaogan; Tang, Zhenan
刊名	NANOTECHNOLOGY
	2013
卷号	24页码:245306
ISSN号	0957-4484
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4540151
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Fac Elect Informat & Elect Engn, Dept Elect Sci & Technol, Dalian 116024, Peoples R China. 2.Shanghai Jiao Tong Univ, Res Inst Micro Nano Sci & Technol, Natl Key Lab Nano Micro Fabricat Technol, Key Lab Thin Film & Microfabricat,Minist Educ, Shanghai 200030, Peoples R China. 3.Samsung Adv Inst Technol, Beijing, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Xueyu,Liu, Pengbo,Huang, Hui,et al. Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics[J]. NANOTECHNOLOGY,2013,24:245306.
APA	Liu, Xueyu.,Liu, Pengbo.,Huang, Hui.,Chen, Changxin.,Jin, Tiening.,...&Tang, Zhenan.(2013).Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics.NANOTECHNOLOGY,24,245306.
MLA	Liu, Xueyu,et al."Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics".NANOTECHNOLOGY 24(2013):245306.

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