Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure | |
Shi, Zhifeng; Zhang, Yuantao; Wu, Bin; Cai, Xupu; Zhang, Jinxiang; Xia, Xiaochuan; Wang, Hui; Dong, Xin; Liang, Hongwei; Zhang, Baolin | |
刊名 | APPLIED PHYSICS LETTERS |
2013 | |
卷号 | 102页码:- |
ISSN号 | 0003-6951 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4539370 |
专题 | 大连理工大学 |
作者单位 | 1.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116023, Peoples R China. 3.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China. 4.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116023, Peoples R China. |
推荐引用方式 GB/T 7714 | Shi, Zhifeng,Zhang, Yuantao,Wu, Bin,et al. Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure[J]. APPLIED PHYSICS LETTERS,2013,102:-. |
APA | Shi, Zhifeng.,Zhang, Yuantao.,Wu, Bin.,Cai, Xupu.,Zhang, Jinxiang.,...&Du, Guotong.(2013).Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure.APPLIED PHYSICS LETTERS,102,-. |
MLA | Shi, Zhifeng,et al."Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure".APPLIED PHYSICS LETTERS 102(2013):-. |
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