| Recent advances in Sb-based III-V nanowires | |
| Gao, Zhaofeng; Sun, Jiamin; Han, Mingming; Yin, Yanxue; Gu, Yu; Yang, Zai-xing; Zeng, Haibo | |
| 刊名 | NANOTECHNOLOGY
 |
| 2019 | |
| 卷号 | 30期号:21 |
| 关键词 | Sb-based III-V NWs controllable growth field-effect-transistors tunnel diode low-power inverter photodetectors Majorana fermions |
| DOI | 10.1088/1361-6528/ab03ee |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4534974 |
| 专题 | 山东大学 |
| 作者单位 | 1.Shandong Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China. 2.[Gao, Zhaofeng 3.Sun, Jiamin 4.Han, |
| 推荐引用方式 GB/T 7714 | Gao, Zhaofeng,Sun, Jiamin,Han, Mingming,et al. Recent advances in Sb-based III-V nanowires[J]. NANOTECHNOLOGY,2019,30(21). |
| APA | Gao, Zhaofeng.,Sun, Jiamin.,Han, Mingming.,Yin, Yanxue.,Gu, Yu.,...&Zeng, Haibo.(2019).Recent advances in Sb-based III-V nanowires.NANOTECHNOLOGY,30(21). |
| MLA | Gao, Zhaofeng,et al."Recent advances in Sb-based III-V nanowires".NANOTECHNOLOGY 30.21(2019). |
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