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	A low-cost infrared absorbing structure for an uncooled infrared detector in a standard CMOS process
	Shen N.; Tang Z.; Yu J.; Huang Z.
刊名	Journal of Semiconductors
	2014
卷号	35页码:-
ISSN号	16744926
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4519317
专题	大连理工大学
作者单位	College of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, China
推荐引用方式 GB/T 7714	Shen N.,Tang Z.,Yu J.,et al. A low-cost infrared absorbing structure for an uncooled infrared detector in a standard CMOS process[J]. Journal of Semiconductors,2014,35:-.
APA	Shen N.,Tang Z.,Yu J.,&Huang Z..(2014).A low-cost infrared absorbing structure for an uncooled infrared detector in a standard CMOS process.Journal of Semiconductors,35,-.
MLA	Shen N.,et al."A low-cost infrared absorbing structure for an uncooled infrared detector in a standard CMOS process".Journal of Semiconductors 35(2014):-.

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