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	Characterization of sidewall roughness for silicon microstructures in micro actuator
	Han, Guoqiang; Jiang, Zhuangde; Jing, Weixuan; Gao, Jianzhong; Prewett, Philip D.; Jiang, Kyle
刊名	INTERNATIONAL JOURNAL OF APPLIED ELECTROMAGNETICS AND MECHANICS
	2010
卷号	33期号:[db:dc_citation_issue]页码:985-990
关键词	line edge roughness (LER) Micro actuator deep reactive ion etching (DRIE) scanning electron microscope (SEM)
ISSN号	1383-5416
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4500668
专题	西安交通大学
推荐引用方式 GB/T 7714	Han, Guoqiang,Jiang, Zhuangde,Jing, Weixuan,et al. Characterization of sidewall roughness for silicon microstructures in micro actuator[J]. INTERNATIONAL JOURNAL OF APPLIED ELECTROMAGNETICS AND MECHANICS,2010,33([db:dc_citation_issue]):985-990.
APA	Han, Guoqiang,Jiang, Zhuangde,Jing, Weixuan,Gao, Jianzhong,Prewett, Philip D.,&Jiang, Kyle.(2010).Characterization of sidewall roughness for silicon microstructures in micro actuator.INTERNATIONAL JOURNAL OF APPLIED ELECTROMAGNETICS AND MECHANICS,33([db:dc_citation_issue]),985-990.
MLA	Han, Guoqiang,et al."Characterization of sidewall roughness for silicon microstructures in micro actuator".INTERNATIONAL JOURNAL OF APPLIED ELECTROMAGNETICS AND MECHANICS 33.[db:dc_citation_issue](2010):985-990.

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