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	Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs
	Li, Zunchao; Xu, Jinpeng; Liu, Linlin; Liang, Feng; Mei, Kuizhi
刊名	IEICE TRANSACTIONS ON ELECTRONICS
	2011
卷号	E94C期号:[db:dc_citation_issue]页码:1120-1126
关键词	dual-material MOSFET surrounding-gate halo
ISSN号	0916-8524
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4499310
专题	西安交通大学
推荐引用方式 GB/T 7714	Li, Zunchao,Xu, Jinpeng,Liu, Linlin,et al. Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs[J]. IEICE TRANSACTIONS ON ELECTRONICS,2011,E94C([db:dc_citation_issue]):1120-1126.
APA	Li, Zunchao,Xu, Jinpeng,Liu, Linlin,Liang, Feng,&Mei, Kuizhi.(2011).Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs.IEICE TRANSACTIONS ON ELECTRONICS,E94C([db:dc_citation_issue]),1120-1126.
MLA	Li, Zunchao,et al."Analytical Drain Current Modeling of Dual-Material Surrounding-Gate MOSFETs".IEICE TRANSACTIONS ON ELECTRONICS E94C.[db:dc_citation_issue](2011):1120-1126.

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