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	Simulation for neutron radiation effects on super deep submicron SOI NMOSFET
	Hu, Zhi-Liang; He, Chao-Hui; Zhang, Guo-He; Guo, Da-Xi
刊名	Yuanzineng Kexue Jishu/Atomic Energy Science and Technology
	2011
卷号	45期号:[db:dc_citation_issue]页码:456-460
关键词	Deep sub-micron Different sizes Neutron fluences Neutron radiation effects Neutron radiations NMOSFET Output characteristics Process parameters
ISSN号	1000-6931
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4487770
专题	西安交通大学
推荐引用方式 GB/T 7714	Hu, Zhi-Liang,He, Chao-Hui,Zhang, Guo-He,et al. Simulation for neutron radiation effects on super deep submicron SOI NMOSFET[J]. Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,2011,45([db:dc_citation_issue]):456-460.
APA	Hu, Zhi-Liang,He, Chao-Hui,Zhang, Guo-He,&Guo, Da-Xi.(2011).Simulation for neutron radiation effects on super deep submicron SOI NMOSFET.Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,45([db:dc_citation_issue]),456-460.
MLA	Hu, Zhi-Liang,et al."Simulation for neutron radiation effects on super deep submicron SOI NMOSFET".Yuanzineng Kexue Jishu/Atomic Energy Science and Technology 45.[db:dc_citation_issue](2011):456-460.

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