Effects of Grain Size of Source Material on Growing 6H-SiC Bulk Crystal by Physical Vapor Transport | |
Shi, Yonggui; Dai, Peiyun; Yang, Jianfeng; Jin, Zhihao; Cheng, Jikuan; Liu, Hulin | |
刊名 | MATERIALS AND MANUFACTURING PROCESSES
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2012 | |
卷号 | 27期号:[db:dc_citation_issue]页码:84-87 |
关键词 | 6H-SiC Single crystal Bulk crystal Source material Grain size Physical vapor transport |
ISSN号 | 1042-6914 |
DOI | [db:dc_identifier_doi] |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4479702 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Shi, Yonggui,Dai, Peiyun,Yang, Jianfeng,et al. Effects of Grain Size of Source Material on Growing 6H-SiC Bulk Crystal by Physical Vapor Transport[J]. MATERIALS AND MANUFACTURING PROCESSES,2012,27([db:dc_citation_issue]):84-87. |
APA | Shi, Yonggui,Dai, Peiyun,Yang, Jianfeng,Jin, Zhihao,Cheng, Jikuan,&Liu, Hulin.(2012).Effects of Grain Size of Source Material on Growing 6H-SiC Bulk Crystal by Physical Vapor Transport.MATERIALS AND MANUFACTURING PROCESSES,27([db:dc_citation_issue]),84-87. |
MLA | Shi, Yonggui,et al."Effects of Grain Size of Source Material on Growing 6H-SiC Bulk Crystal by Physical Vapor Transport".MATERIALS AND MANUFACTURING PROCESSES 27.[db:dc_citation_issue](2012):84-87. |
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