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	Effects of Grain Size of Source Material on Growing 6H-SiC Bulk Crystal by Physical Vapor Transport
	Shi, Yonggui; Dai, Peiyun; Yang, Jianfeng; Jin, Zhihao; Cheng, Jikuan; Liu, Hulin
刊名	MATERIALS AND MANUFACTURING PROCESSES
	2012
卷号	27期号:[db:dc_citation_issue]页码:84-87
关键词	6H-SiC Single crystal Bulk crystal Source material Grain size Physical vapor transport
ISSN号	1042-6914
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4479702
专题	西安交通大学
推荐引用方式 GB/T 7714	Shi, Yonggui,Dai, Peiyun,Yang, Jianfeng,et al. Effects of Grain Size of Source Material on Growing 6H-SiC Bulk Crystal by Physical Vapor Transport[J]. MATERIALS AND MANUFACTURING PROCESSES,2012,27([db:dc_citation_issue]):84-87.
APA	Shi, Yonggui,Dai, Peiyun,Yang, Jianfeng,Jin, Zhihao,Cheng, Jikuan,&Liu, Hulin.(2012).Effects of Grain Size of Source Material on Growing 6H-SiC Bulk Crystal by Physical Vapor Transport.MATERIALS AND MANUFACTURING PROCESSES,27([db:dc_citation_issue]),84-87.
MLA	Shi, Yonggui,et al."Effects of Grain Size of Source Material on Growing 6H-SiC Bulk Crystal by Physical Vapor Transport".MATERIALS AND MANUFACTURING PROCESSES 27.[db:dc_citation_issue](2012):84-87.

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