Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique | |
Shi, Yonggui; Yang, Jianfeng; Liu, Hulin; Dai, Peiyun; Liu, Bobo; Jin, Zhihao; Qiao, Guanjun; Li, Hailiang | |
刊名 | JOURNAL OF CRYSTAL GROWTH
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2012 | |
卷号 | 349期号:[db:dc_citation_issue]页码:68-74 |
关键词 | Growth from vapor Physical vapor transport technique Semiconducting silicon carbide Growth models Whiskers |
ISSN号 | 0022-0248 |
DOI | [db:dc_identifier_doi] |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4479568 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Shi, Yonggui,Yang, Jianfeng,Liu, Hulin,et al. Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique[J]. JOURNAL OF CRYSTAL GROWTH,2012,349([db:dc_citation_issue]):68-74. |
APA | Shi, Yonggui.,Yang, Jianfeng.,Liu, Hulin.,Dai, Peiyun.,Liu, Bobo.,...&Li, Hailiang.(2012).Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique.JOURNAL OF CRYSTAL GROWTH,349([db:dc_citation_issue]),68-74. |
MLA | Shi, Yonggui,et al."Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique".JOURNAL OF CRYSTAL GROWTH 349.[db:dc_citation_issue](2012):68-74. |
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