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	Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique
	Shi, Yonggui; Yang, Jianfeng; Liu, Hulin; Dai, Peiyun; Liu, Bobo; Jin, Zhihao; Qiao, Guanjun; Li, Hailiang
刊名	JOURNAL OF CRYSTAL GROWTH
	2012
卷号	349期号:[db:dc_citation_issue]页码:68-74
关键词	Growth from vapor Physical vapor transport technique Semiconducting silicon carbide Growth models Whiskers
ISSN号	0022-0248
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4479568
专题	西安交通大学
推荐引用方式 GB/T 7714	Shi, Yonggui,Yang, Jianfeng,Liu, Hulin,et al. Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique[J]. JOURNAL OF CRYSTAL GROWTH,2012,349([db:dc_citation_issue]):68-74.
APA	Shi, Yonggui.,Yang, Jianfeng.,Liu, Hulin.,Dai, Peiyun.,Liu, Bobo.,...&Li, Hailiang.(2012).Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique.JOURNAL OF CRYSTAL GROWTH,349([db:dc_citation_issue]),68-74.
MLA	Shi, Yonggui,et al."Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique".JOURNAL OF CRYSTAL GROWTH 349.[db:dc_citation_issue](2012):68-74.

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