QQ客服 官方微博 反馈留言

	Charge effect in secondary electron emission from silicon surface induced by slow neon ions
	Xu, Zhongfeng; Zeng, Lixia; Zhao, Yongtao; Wang, Jianguo; Wang, Yuyu; Zhang, Xiaoan; Xiao, Guoqing; Li, Fuli
刊名	LASER AND PARTICLE BEAMS
	2012
卷号	30期号:[db:dc_citation_issue]页码:319-324
关键词	Threshold velocity Electron emission yield Highly charged ions (HCI) Charge restrain factor
ISSN号	0263-0346
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4475676
专题	西安交通大学
推荐引用方式 GB/T 7714	Xu, Zhongfeng,Zeng, Lixia,Zhao, Yongtao,et al. Charge effect in secondary electron emission from silicon surface induced by slow neon ions[J]. LASER AND PARTICLE BEAMS,2012,30([db:dc_citation_issue]):319-324.
APA	Xu, Zhongfeng.,Zeng, Lixia.,Zhao, Yongtao.,Wang, Jianguo.,Wang, Yuyu.,...&Li, Fuli.(2012).Charge effect in secondary electron emission from silicon surface induced by slow neon ions.LASER AND PARTICLE BEAMS,30([db:dc_citation_issue]),319-324.
MLA	Xu, Zhongfeng,et al."Charge effect in secondary electron emission from silicon surface induced by slow neon ions".LASER AND PARTICLE BEAMS 30.[db:dc_citation_issue](2012):319-324.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。