Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics | |
Wei, Xixiong[1]; Deng, Wanling[1]; Fang, Jielin[1]; Ma, Xiaoyu[1]; Huang, Junkai[1] | |
2017 | |
卷号 | 80期号:1 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4453983 |
专题 | 暨南大学 |
作者单位 | [1]Jinan Univ, Dept Elect Engn, Guangzhou 510630, Guangdong, Peoples R China |
推荐引用方式 GB/T 7714 | Wei, Xixiong[1],Deng, Wanling[1],Fang, Jielin[1],et al. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics[J],2017,80(1). |
APA | Wei, Xixiong[1],Deng, Wanling[1],Fang, Jielin[1],Ma, Xiaoyu[1],&Huang, Junkai[1].(2017).Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics.,80(1). |
MLA | Wei, Xixiong[1],et al."Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics".80.1(2017). |
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