QQ客服 官方微博 反馈留言

	Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics
	Wei, Xixiong[1]; Deng, Wanling[1]; Fang, Jielin[1]; Ma, Xiaoyu[1]; Huang, Junkai[1]
	2017
卷号	80期号:1
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4453983
专题	暨南大学
作者单位	[1]Jinan Univ, Dept Elect Engn, Guangzhou 510630, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Wei, Xixiong[1],Deng, Wanling[1],Fang, Jielin[1],et al. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics[J],2017,80(1).
APA	Wei, Xixiong[1],Deng, Wanling[1],Fang, Jielin[1],Ma, Xiaoyu[1],&Huang, Junkai[1].(2017).Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics.,80(1).
MLA	Wei, Xixiong[1],et al."Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics".80.1(2017).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。