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	Low threshold Nd3+: KY(WO4)(2) laser operated at 1072 nm pumped by diode
	Lin, Lang[1]; Chen, Zhenqiang[1,2]; Zhang, Ge[3]; Wang, Rugang[1]; Li, Zhen[1]; Li, Jingzhao[1]
	2007
卷号	5期号:10页码:582
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4448694
专题	暨南大学
作者单位	1.[1]Jinan Univ, Inst Optoelect, Guangzhou 510632, Peoples R China 2.[2]Jinan Univ, Dept Optoelect, Guangzhou 510632, Peoples R China 3.[3]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China
推荐引用方式 GB/T 7714	Lin, Lang[1],Chen, Zhenqiang[1,2],Zhang, Ge[3],et al. Low threshold Nd3+: KY(WO4)(2) laser operated at 1072 nm pumped by diode[J],2007,5(10):582.
APA	Lin, Lang[1],Chen, Zhenqiang[1,2],Zhang, Ge[3],Wang, Rugang[1],Li, Zhen[1],&Li, Jingzhao[1].(2007).Low threshold Nd3+: KY(WO4)(2) laser operated at 1072 nm pumped by diode.,5(10),582.
MLA	Lin, Lang[1],et al."Low threshold Nd3+: KY(WO4)(2) laser operated at 1072 nm pumped by diode".5.10(2007):582.

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