Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer
Ji, Panfeng ; Liu, Naixin ; Wei, Tongbo ; Liu, Zhe ; Lu, Hongxi ; Wang, Junxi ; Li, Jinmin
刊名journal of semiconductors
2011
卷号32期号:11页码:114006
关键词Efficiency Electrostatic devices Electrostatic discharge Superlattices Voltage control
ISSN号16744926
通讯作者ji, p.(jipanfeng@semi.ac.cn)
学科主题半导体材料
收录类别EI
语种英语
公开日期2012-06-14
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/23144]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Ji, Panfeng,Liu, Naixin,Wei, Tongbo,et al. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer[J]. journal of semiconductors,2011,32(11):114006.
APA Ji, Panfeng.,Liu, Naixin.,Wei, Tongbo.,Liu, Zhe.,Lu, Hongxi.,...&Li, Jinmin.(2011).Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer.journal of semiconductors,32(11),114006.
MLA Ji, Panfeng,et al."Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer".journal of semiconductors 32.11(2011):114006.
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