Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer | |
Ning, Honglong[1]; Zeng, Yong[1]; Zheng, Zeke[1]; Zhang, Hongke[1]; Fang, Zhiqiang[1]; Yao, Rihui[1]; Hu, Shiben[1]; Li, Xiaoqing[1]; Peng, Junbiao[1]; Xie, Weiguang[2] | |
2018 | |
卷号 | 65期号:2页码:537 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4431105 |
专题 | 暨南大学 |
作者单位 | 1.[1] State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, 510640, China 2.[2] Siyuan Laboratory, Department of Physics and Department of Electronic Engineering, Jinan University, Guangzhou, 510632, China 3.[3] Guangdong Prov. Key Lab. of Quant. Eng. and Quant. Mat. and the Institute for Advanced Materials, South China Normal University, Guangzhou, 510006, China |
推荐引用方式 GB/T 7714 | Ning, Honglong[1],Zeng, Yong[1],Zheng, Zeke[1],et al. Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer[J],2018,65(2):537. |
APA | Ning, Honglong[1].,Zeng, Yong[1].,Zheng, Zeke[1].,Zhang, Hongke[1].,Fang, Zhiqiang[1].,...&Lu, Xubing[3].(2018).Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer.,65(2),537. |
MLA | Ning, Honglong[1],et al."Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer".65.2(2018):537. |
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