| The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition | |
| Tao, Pengcheng; Liang, Hongwei; Xia, Xiaochuan; Feng, Qiuju; Wang, Dongsheng; Liu, Yang; Shen, Rensheng; Zhang, Kexiong; Cai, Xin; Luo, Yingmin | |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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| 2014 | |
| 卷号 | 25页码:4268-4272 |
| ISSN号 | 0957-4522 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4427562 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 2.Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China. 3.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 4.Jilin Univ, Sch Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Tao, Pengcheng,Liang, Hongwei,Xia, Xiaochuan,et al. The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25:4268-4272. |
| APA | Tao, Pengcheng.,Liang, Hongwei.,Xia, Xiaochuan.,Feng, Qiuju.,Wang, Dongsheng.,...&Du, Guotong.(2014).The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,25,4268-4272. |
| MLA | Tao, Pengcheng,et al."The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 25(2014):4268-4272. |
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