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	Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth
	Zhang, Kexiong; Liang, Hongwei; Shen, Rensheng; Song, Shiwei; Wang, Dongsheng; Liu, Yang; Xia, Xiaochuan; Yang, Dechao; Luo, Yingmin; Du, Guotong
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2014
卷号	116页码:1561-1566
ISSN号	0947-8396
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4427377
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 3.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 4.Jilin Univ, Sch Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China. 5.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 6.Jilin Univ, Sch Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, Kexiong,Liang, Hongwei,Shen, Rensheng,et al. Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,116:1561-1566.
APA	Zhang, Kexiong.,Liang, Hongwei.,Shen, Rensheng.,Song, Shiwei.,Wang, Dongsheng.,...&Du, Guotong.(2014).Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,116,1561-1566.
MLA	Zhang, Kexiong,et al."Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 116(2014):1561-1566.

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