| Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching | |
| Yang, Dechao; Liang, Hongwei; Qiu, Yu; Shen, Rensheng; Liu, Yang; Xia, Xiaochuan; Song, Shiwei; Zhang, Kexiong; Yu, Zhennan; Zhang, Yuantao | |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 2014 | |
| 卷号 | 295页码:26-30 |
| 关键词 | Patterned sapphire substrate Wet etching Crystallographic planes Etching zones Etching rate |
| ISSN号 | 0169-4332 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4426315 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China. 2.Dalian Neusoft Univ Informat, Dept Elect Engn, Dalian 116024, Peoples R China. 3.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 4.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 5.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 6.Zhejiang Crystal Optech Co Ltd, Taizhou 318015, Peoples R China. 7.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China. 8.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China. 9.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Yang, Dechao,Liang, Hongwei,Qiu, Yu,et al. Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching[J]. APPLIED SURFACE SCIENCE,2014,295:26-30. |
| APA | Yang, Dechao.,Liang, Hongwei.,Qiu, Yu.,Shen, Rensheng.,Liu, Yang.,...&Du, Guotong.(2014).Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching.APPLIED SURFACE SCIENCE,295,26-30. |
| MLA | Yang, Dechao,et al."Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching".APPLIED SURFACE SCIENCE 295(2014):26-30. |
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