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	Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate
	Zhang, Kexiong; Liang, Hongwei; Shen, Rensheng; Wang, Dongsheng; Tao, Pengcheng; Liu, Yang; Xia, Xiaochuan; Luo, Yingmin; Du, Guotong
刊名	APPLIED PHYSICS LETTERS
	2014
卷号	104
ISSN号	0003-6951
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4426077
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 4.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 5.Jilin Univ, Sch Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, Kexiong,Liang, Hongwei,Shen, Rensheng,et al. Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate[J]. APPLIED PHYSICS LETTERS,2014,104.
APA	Zhang, Kexiong.,Liang, Hongwei.,Shen, Rensheng.,Wang, Dongsheng.,Tao, Pengcheng.,...&Du, Guotong.(2014).Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate.APPLIED PHYSICS LETTERS,104.
MLA	Zhang, Kexiong,et al."Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n(+)-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate".APPLIED PHYSICS LETTERS 104(2014).

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