| Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate | |
| Yang, Dechao; Liang, Hongwei; Qiu, Yu; Shen, Rensheng; Liu, Yang; Xia, Xiaochuan; Song, Shiwei; Zhang, Kexiong; Yu, Zhennan; Du, Guotong | |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 2014 | |
| 卷号 | 25页码:267-272 |
| ISSN号 | 0957-4522 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4425393 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130023, Peoples R China. 2.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 3.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. 4.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. 5.Zhejiang Crystal Optech Co Ltd, Taizhou 318015, Peoples R China. 6.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130023, Peoples R China. 7.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Yang, Dechao,Liang, Hongwei,Qiu, Yu,et al. Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014,25:267-272. |
| APA | Yang, Dechao.,Liang, Hongwei.,Qiu, Yu.,Shen, Rensheng.,Liu, Yang.,...&Du, Guotong.(2014).Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,25,267-272. |
| MLA | Yang, Dechao,et al."Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 25(2014):267-272. |
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