Atomic layer etching of SiO2 under Ar/C4F8 plasmas with pulsed bias | |
Dai ZL(戴忠玲); Wang YN(王友年) | |
2015 | |
会议名称 | The joint 68th Gaseous Electronics Conference, the 9th International Conference on Reactive Plasmas, and the 33rd Symposium on Plasma Processing (GEC-68/ICRP-9/SPP-33) |
会议录 | The joint 68th Gaseous Electronics Conference, the 9th International Conference on Reactive Plasmas, and the 33rd Symposium on Plasma Processing (GEC-68/ICRP-9/SPP-33) |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4411437 |
专题 | 大连理工大学 |
推荐引用方式 GB/T 7714 | Dai ZL,Wang YN. Atomic layer etching of SiO2 under Ar/C4F8 plasmas with pulsed bias[C]. 见:The joint 68th Gaseous Electronics Conference, the 9th International Conference on Reactive Plasmas, and the 33rd Symposium on Plasma Processing (GEC-68/ICRP-9/SPP-33). |
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