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	A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film
	Liang, Hongwei; Chen, Yuanpeng; Xia, Xiaochuan; Zhang, Chao; Shen, Rensheng; Liu, Yang; Luo, Yingmin; Du, Guotong
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2015
卷号	39页码:582-586
关键词	beta-Ga2O3 thin film ICP etching SF6 Dry etching
ISSN号	1369-8001
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4407506
专题	大连理工大学
作者单位	Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Liang, Hongwei,Chen, Yuanpeng,Xia, Xiaochuan,et al. A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2015,39:582-586.
APA	Liang, Hongwei.,Chen, Yuanpeng.,Xia, Xiaochuan.,Zhang, Chao.,Shen, Rensheng.,...&Du, Guotong.(2015).A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,39,582-586.
MLA	Liang, Hongwei,et al."A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 39(2015):582-586.

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