Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure | |
Wang, Qingpeng; Jiang, Ying; Zhang, Jiaqi; Kawaharada, Kazuya; Li, Liuan; Wang, Dejun; Ao, Jin-Ping | |
刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
2015 | |
卷号 | 30页码:- |
关键词 | GaN MOSFET recess gate etching damage enhancement mode |
ISSN号 | 0268-1242 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4406607 |
专题 | 大连理工大学 |
作者单位 | 1.Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan. 2.Dalian Univ Technol, Sch Elect Sci & Technol, Dalian 116024, Peoples R China. 3.Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan. 4.Dalian Univ Technol, Sch Elect Sci & Technol, Dalian 116024, Peoples R China. |
推荐引用方式 GB/T 7714 | Wang, Qingpeng,Jiang, Ying,Zhang, Jiaqi,et al. Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2015,30:-. |
APA | Wang, Qingpeng.,Jiang, Ying.,Zhang, Jiaqi.,Kawaharada, Kazuya.,Li, Liuan.,...&Ao, Jin-Ping.(2015).Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,30,-. |
MLA | Wang, Qingpeng,et al."Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 30(2015):-. |
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