Core-shell nanowire diode based on strain-engineered bandgap | |
Liu, Pengbo; Huang, Hui; Liu, Xueyu; Bai, Min; Zhao, Danna; Tang, Zhenan; Huang, Xianliang; Kim, Ji-Yeun; Guo, Jinwei | |
刊名 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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2015 | |
卷号 | 212页码:617-622 |
关键词 | bandgap core-shell structures electron mobility InAs/InP nanowire diodes strain engineering |
ISSN号 | 1862-6300 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4406055 |
专题 | 大连理工大学 |
作者单位 | 1.Dalian Univ Technol, Dept Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China. 2.Samsung Adv Inst Technol, Beijing 100125, Peoples R China. 3.Yanshan Univ, Coll Informat Sci & Engn, Qinhuangdao 066004, Peoples R China. |
推荐引用方式 GB/T 7714 | Liu, Pengbo,Huang, Hui,Liu, Xueyu,et al. Core-shell nanowire diode based on strain-engineered bandgap[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2015,212:617-622. |
APA | Liu, Pengbo.,Huang, Hui.,Liu, Xueyu.,Bai, Min.,Zhao, Danna.,...&Guo, Jinwei.(2015).Core-shell nanowire diode based on strain-engineered bandgap.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,212,617-622. |
MLA | Liu, Pengbo,et al."Core-shell nanowire diode based on strain-engineered bandgap".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 212(2015):617-622. |
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