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Core-shell nanowire diode based on strain-engineered bandgap
Liu, Pengbo; Huang, Hui; Liu, Xueyu; Bai, Min; Zhao, Danna; Tang, Zhenan; Huang, Xianliang; Kim, Ji-Yeun; Guo, Jinwei
刊名PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2015
卷号212页码:617-622
关键词bandgap core-shell structures electron mobility InAs/InP nanowire diodes strain engineering
ISSN号1862-6300
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4406055
专题大连理工大学
作者单位1.Dalian Univ Technol, Dept Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China.
2.Samsung Adv Inst Technol, Beijing 100125, Peoples R China.
3.Yanshan Univ, Coll Informat Sci & Engn, Qinhuangdao 066004, Peoples R China.
推荐引用方式
GB/T 7714
Liu, Pengbo,Huang, Hui,Liu, Xueyu,et al. Core-shell nanowire diode based on strain-engineered bandgap[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2015,212:617-622.
APA Liu, Pengbo.,Huang, Hui.,Liu, Xueyu.,Bai, Min.,Zhao, Danna.,...&Guo, Jinwei.(2015).Core-shell nanowire diode based on strain-engineered bandgap.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,212,617-622.
MLA Liu, Pengbo,et al."Core-shell nanowire diode based on strain-engineered bandgap".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 212(2015):617-622.
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