Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE | |
Zhao, Yang; Wang, Hui; Wu, Guoguang; Jing, Qiang; Gao, Fubin; Li, Wancheng; Zhang, Baolin; Du, Guotong | |
刊名 | VACUUM
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2015 | |
卷号 | 111页码:15-18 |
关键词 | Indium nitride PAMBE Nitridation Photoluminescence |
ISSN号 | 0042-207X |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4405160 |
专题 | 大连理工大学 |
作者单位 | 1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China. 2.Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471003, Peoples R China. 3.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China. 4.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116023, Peoples R China. |
推荐引用方式 GB/T 7714 | Zhao, Yang,Wang, Hui,Wu, Guoguang,et al. Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE[J]. VACUUM,2015,111:15-18. |
APA | Zhao, Yang.,Wang, Hui.,Wu, Guoguang.,Jing, Qiang.,Gao, Fubin.,...&Du, Guotong.(2015).Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE.VACUUM,111,15-18. |
MLA | Zhao, Yang,et al."Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE".VACUUM 111(2015):15-18. |
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