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Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE
Zhao, Yang; Wang, Hui; Wu, Guoguang; Jing, Qiang; Gao, Fubin; Li, Wancheng; Zhang, Baolin; Du, Guotong
刊名VACUUM
2015
卷号111页码:15-18
关键词Indium nitride PAMBE Nitridation Photoluminescence
ISSN号0042-207X
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4405160
专题大连理工大学
作者单位1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.
2.Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471003, Peoples R China.
3.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China.
4.Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116023, Peoples R China.
推荐引用方式
GB/T 7714
Zhao, Yang,Wang, Hui,Wu, Guoguang,et al. Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE[J]. VACUUM,2015,111:15-18.
APA Zhao, Yang.,Wang, Hui.,Wu, Guoguang.,Jing, Qiang.,Gao, Fubin.,...&Du, Guotong.(2015).Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE.VACUUM,111,15-18.
MLA Zhao, Yang,et al."Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE".VACUUM 111(2015):15-18.
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