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	Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer
	Liu, Jianxun; Liang, Hongwei; Zheng, Xiantong; Liu, Yang; Xia, Xiaochuan; Abbas, Qasim; Huang, Huolin; Shen, Rensheng; Luo, Yingmin; Du, Guotong
刊名	JOURNAL OF PHYSICAL CHEMISTRY C
	2017
卷号	121页码:18095-18101
ISSN号	1932-7447
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4354216
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China. 3.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 4.Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Jianxun,Liang, Hongwei,Zheng, Xiantong,et al. Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2017,121:18095-18101.
APA	Liu, Jianxun.,Liang, Hongwei.,Zheng, Xiantong.,Liu, Yang.,Xia, Xiaochuan.,...&Du, Guotong.(2017).Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer.JOURNAL OF PHYSICAL CHEMISTRY C,121,18095-18101.
MLA	Liu, Jianxun,et al."Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer".JOURNAL OF PHYSICAL CHEMISTRY C 121(2017):18095-18101.

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