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Determination of the Recombination Velocity on Unequal Surfaces of Silicon Wafers from Two-Spectrum Excited Quasi-Steady-State Photoconductance
Wei, Yi; Song, Chengyuan; Li, Ping; Tan, Xin; Yuan, Yonghai; Wang, Yuxuan; Li, Xiaoxuan; Zhou, Ying; Bai, Hongliang; Liu, Aimin
刊名ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2017
卷号6页码:N97-N103
ISSN号2162-8769
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4353690
专题大连理工大学
作者单位1.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China.
2.Solargiga Energy Holdings Ltd, Jinzhou 121000, Peoples R China.
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GB/T 7714
Wei, Yi,Song, Chengyuan,Li, Ping,et al. Determination of the Recombination Velocity on Unequal Surfaces of Silicon Wafers from Two-Spectrum Excited Quasi-Steady-State Photoconductance[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2017,6:N97-N103.
APA Wei, Yi.,Song, Chengyuan.,Li, Ping.,Tan, Xin.,Yuan, Yonghai.,...&Liu, Aimin.(2017).Determination of the Recombination Velocity on Unequal Surfaces of Silicon Wafers from Two-Spectrum Excited Quasi-Steady-State Photoconductance.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,6,N97-N103.
MLA Wei, Yi,et al."Determination of the Recombination Velocity on Unequal Surfaces of Silicon Wafers from Two-Spectrum Excited Quasi-Steady-State Photoconductance".ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 6(2017):N97-N103.
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