Determination of the Recombination Velocity on Unequal Surfaces of Silicon Wafers from Two-Spectrum Excited Quasi-Steady-State Photoconductance | |
Wei, Yi; Song, Chengyuan; Li, Ping; Tan, Xin; Yuan, Yonghai; Wang, Yuxuan; Li, Xiaoxuan; Zhou, Ying; Bai, Hongliang; Liu, Aimin | |
刊名 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY |
2017 | |
卷号 | 6页码:N97-N103 |
ISSN号 | 2162-8769 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4353690 |
专题 | 大连理工大学 |
作者单位 | 1.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 2.Solargiga Energy Holdings Ltd, Jinzhou 121000, Peoples R China. |
推荐引用方式 GB/T 7714 | Wei, Yi,Song, Chengyuan,Li, Ping,et al. Determination of the Recombination Velocity on Unequal Surfaces of Silicon Wafers from Two-Spectrum Excited Quasi-Steady-State Photoconductance[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2017,6:N97-N103. |
APA | Wei, Yi.,Song, Chengyuan.,Li, Ping.,Tan, Xin.,Yuan, Yonghai.,...&Liu, Aimin.(2017).Determination of the Recombination Velocity on Unequal Surfaces of Silicon Wafers from Two-Spectrum Excited Quasi-Steady-State Photoconductance.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,6,N97-N103. |
MLA | Wei, Yi,et al."Determination of the Recombination Velocity on Unequal Surfaces of Silicon Wafers from Two-Spectrum Excited Quasi-Steady-State Photoconductance".ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 6(2017):N97-N103. |
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