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	Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe
	Lugovskoi, A., V; Katsnelson, M., I; Rudenko, A. N.
刊名	PHYSICAL REVIEW LETTERS
	2019
卷号	123期号:17
ISSN号	0031-9007
DOI	10.1103/PhysRevLett.123.176401
URL标识	查看原文
收录类别	EI ; SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4263531
专题	武汉大学
推荐引用方式 GB/T 7714	Lugovskoi, A., V,Katsnelson, M., I,Rudenko, A. N.. Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe[J]. PHYSICAL REVIEW LETTERS,2019,123(17).
APA	Lugovskoi, A., V,Katsnelson, M., I,&Rudenko, A. N..(2019).Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe.PHYSICAL REVIEW LETTERS,123(17).
MLA	Lugovskoi, A., V,et al."Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe".PHYSICAL REVIEW LETTERS 123.17(2019).

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