Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe | |
Lugovskoi, A., V; Katsnelson, M., I; Rudenko, A. N. | |
刊名 | PHYSICAL REVIEW LETTERS
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2019 | |
卷号 | 123期号:17 |
ISSN号 | 0031-9007 |
DOI | 10.1103/PhysRevLett.123.176401 |
URL标识 | 查看原文 |
收录类别 | EI ; SCIE |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4263531 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Lugovskoi, A., V,Katsnelson, M., I,Rudenko, A. N.. Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe[J]. PHYSICAL REVIEW LETTERS,2019,123(17). |
APA | Lugovskoi, A., V,Katsnelson, M., I,&Rudenko, A. N..(2019).Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe.PHYSICAL REVIEW LETTERS,123(17). |
MLA | Lugovskoi, A., V,et al."Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe".PHYSICAL REVIEW LETTERS 123.17(2019). |
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