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	Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility
	Yuan, Jun-Hui; Zhang, Biao; Song, Ya-Qian; Wang, Jia-Fu; Xue, Kan-Hao; Miao, Xiang-Shui
刊名	Journal of Materials Science
	2019
卷号	54期号:9
ISSN号	0022-2461
DOI	10.1007/s10853-019-03380-4
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4240344
专题	武汉大学
推荐引用方式 GB/T 7714	Yuan, Jun-Hui,Zhang, Biao,Song, Ya-Qian,et al. Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility[J]. Journal of Materials Science,2019,54(9).
APA	Yuan, Jun-Hui,Zhang, Biao,Song, Ya-Qian,Wang, Jia-Fu,Xue, Kan-Hao,&Miao, Xiang-Shui.(2019).Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility.Journal of Materials Science,54(9).
MLA	Yuan, Jun-Hui,et al."Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility".Journal of Materials Science 54.9(2019).

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