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	The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
	Zhou, Shengjun; Liu, Xingtong; Yan, Han; Gao, Yilin; Xu, Haohao; Zhao, Jie; Quan, Zhijue; Gui, Chengqun; Liu, Sheng
刊名	SCIENTIFIC REPORTS
	2018
卷号	8
ISSN号	2045-2322
DOI	10.1038/s41598-018-29440-4
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4237462
专题	武汉大学
推荐引用方式 GB/T 7714	Zhou, Shengjun,Liu, Xingtong,Yan, Han,et al. The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes[J]. SCIENTIFIC REPORTS,2018,8.
APA	Zhou, Shengjun.,Liu, Xingtong.,Yan, Han.,Gao, Yilin.,Xu, Haohao.,...&Liu, Sheng.(2018).The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes.SCIENTIFIC REPORTS,8.
MLA	Zhou, Shengjun,et al."The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes".SCIENTIFIC REPORTS 8(2018).

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