High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate | |
Zhou, Shengjun; Xu, Haohao; Tang, Bin; Liu, Yingce; Wan, Hui; Miao, Jiahao | |
刊名 | OPTICS EXPRESS |
2019 | |
卷号 | 27期号:20 |
ISSN号 | 1094-4087 |
DOI | 10.1364/OE.27.0A1506 |
URL标识 | 查看原文 |
收录类别 | SCIE |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4233508 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Zhou, Shengjun,Xu, Haohao,Tang, Bin,et al. High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate[J]. OPTICS EXPRESS,2019,27(20). |
APA | Zhou, Shengjun,Xu, Haohao,Tang, Bin,Liu, Yingce,Wan, Hui,&Miao, Jiahao.(2019).High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate.OPTICS EXPRESS,27(20). |
MLA | Zhou, Shengjun,et al."High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate".OPTICS EXPRESS 27.20(2019). |
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