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	Band structure and thermoelectric properties of Al-doped Mg3−xAlxSb2 compounds
	Cui, Yunlong; Zhang, Xiaolian; Duan, Bo; Li, Jialiang; Yang, Houjiang; Wang, Hongtao; Wen, Pin; Gao, Tao; Fang, Zhou; Li, Guodong
刊名	Journal of Materials Science: Materials in Electronics
	2019
卷号	30期号:16
ISSN号	0957-4522
DOI	10.1007/s10854-019-01893-x
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4231963
专题	武汉大学
推荐引用方式 GB/T 7714	Cui, Yunlong,Zhang, Xiaolian,Duan, Bo,et al. Band structure and thermoelectric properties of Al-doped Mg3−xAlxSb2 compounds[J]. Journal of Materials Science: Materials in Electronics,2019,30(16).
APA	Cui, Yunlong.,Zhang, Xiaolian.,Duan, Bo.,Li, Jialiang.,Yang, Houjiang.,...&Zhai, Pengcheng.(2019).Band structure and thermoelectric properties of Al-doped Mg3−xAlxSb2 compounds.Journal of Materials Science: Materials in Electronics,30(16).
MLA	Cui, Yunlong,et al."Band structure and thermoelectric properties of Al-doped Mg3−xAlxSb2 compounds".Journal of Materials Science: Materials in Electronics 30.16(2019).

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