Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory | |
Wu, Facai; Si, Shuyao; Cao, Peng; Wei, Wei; Zhao, Xiaolong; Shi, Tuo; Zhang, Xumeng; Ma, Jianwei; Cao, Rongrong; Liao, Lei | |
刊名 | Advanced Electronic Materials |
2019 | |
卷号 | 5期号:4 |
DOI | 10.1002/aelm.201800747 |
URL标识 | 查看原文 |
收录类别 | EI |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4231931 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Wu, Facai,Si, Shuyao,Cao, Peng,et al. Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory[J]. Advanced Electronic Materials,2019,5(4). |
APA | Wu, Facai.,Si, Shuyao.,Cao, Peng.,Wei, Wei.,Zhao, Xiaolong.,...&Liu, Qi.(2019).Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory.Advanced Electronic Materials,5(4). |
MLA | Wu, Facai,et al."Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory".Advanced Electronic Materials 5.4(2019). |
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