Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility | |
Fang, Wen-Yu; Li, Ping-An; Yuan, Jun-Hui; Xue, Kan-Hao; Wang, Jia-Fu | |
刊名 | Journal of Electronic Materials
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2019 | |
ISSN号 | 0361-5235 |
DOI | 10.1007/s11664-019-07685-7 |
URL标识 | 查看原文 |
收录类别 | EI |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4231624 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Fang, Wen-Yu,Li, Ping-An,Yuan, Jun-Hui,et al. Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility[J]. Journal of Electronic Materials,2019. |
APA | Fang, Wen-Yu,Li, Ping-An,Yuan, Jun-Hui,Xue, Kan-Hao,&Wang, Jia-Fu.(2019).Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility.Journal of Electronic Materials. |
MLA | Fang, Wen-Yu,et al."Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility".Journal of Electronic Materials (2019). |
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