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	Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility
	Fang, Wen-Yu; Li, Ping-An; Yuan, Jun-Hui; Xue, Kan-Hao; Wang, Jia-Fu
刊名	Journal of Electronic Materials
	2019
ISSN号	0361-5235
DOI	10.1007/s11664-019-07685-7
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4231624
专题	武汉大学
推荐引用方式 GB/T 7714	Fang, Wen-Yu,Li, Ping-An,Yuan, Jun-Hui,et al. Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility[J]. Journal of Electronic Materials,2019.
APA	Fang, Wen-Yu,Li, Ping-An,Yuan, Jun-Hui,Xue, Kan-Hao,&Wang, Jia-Fu.(2019).Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility.Journal of Electronic Materials.
MLA	Fang, Wen-Yu,et al."Nb2SiTe4 and Nb2GeTe4: Unexplored 2D Ternary Layered Tellurides with High Stability, Narrow Band Gap and High Electron Mobility".Journal of Electronic Materials (2019).

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