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	Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements
	Chen, Z.Q.; Hu, X.W.; Wang, S.J.; Li, S.Q.
刊名	Solid State Communications
	1996
卷号	99期号:10
ISSN号	0038-1098
DOI	10.1016/0038-1098(96)00851-4
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4219277
专题	武汉大学
推荐引用方式 GB/T 7714	Chen, Z.Q.,Hu, X.W.,Wang, S.J.,et al. Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements[J]. Solid State Communications,1996,99(10).
APA	Chen, Z.Q.,Hu, X.W.,Wang, S.J.,&Li, S.Q..(1996).Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements.Solid State Communications,99(10).
MLA	Chen, Z.Q.,et al."Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements".Solid State Communications 99.10(1996).

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