Ta-doped In2O3 transparent conductive films with high transmittance and low resistance

	Ta-doped In2O3 transparent conductive films with high transmittance and low resistance
	Wang B ; Hu LM ; Liu FM ; Qin L ; Liu Y ; Wang LJ
刊名	optica applicata
	2010
卷号	40 期号:1 页码:25-31
关键词	ZNO THIN-FILMS OXIDE-FILMS ROOM-TEMPERATURE ITO FILMS GA DEPOSITION GROWTH RATIO RF
ISSN号	0078-5466
通讯作者	wang b
中文摘要	ta-doped in2o3 transparent conductive oxide (tco) thin films are deposited on glass substrates by radio-frequency (rf) sputtering at room-temperature. the influence of sputtering power on the structural, morphologic, electrical, and optical properties of the films is investigated by x-ray diffraction (xrd), field emission scanning electron microscopy (fe-sem), hall measurement, and optical transmission spectroscopy. the obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. the minimum resistivity of 2.8x10(-4) omega cm is obtained from the film deposited at the sputtering power of 170 w. the average optical transmittance of the films is over 90%.
收录类别	SCI收录期刊论文
语种	英语
WOS记录号	WOS:000277647100003
公开日期	2012-06-06
内容类型	期刊论文
源URL	[http://ir.ciac.jl.cn/handle/322003/43722]
专题	长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式 GB/T 7714	Wang B,Hu LM,Liu FM,et al. Ta-doped In2O3 transparent conductive films with high transmittance and low resistance[J]. optica applicata,2010,40(1):25-31.
APA	Wang B,Hu LM,Liu FM,Qin L,Liu Y,&Wang LJ.(2010).Ta-doped In2O3 transparent conductive films with high transmittance and low resistance.optica applicata,40(1),25-31.
MLA	Wang B,et al."Ta-doped In2O3 transparent conductive films with high transmittance and low resistance".optica applicata 40.1(2010):25-31.