Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements | |
Chen, Z.Q.; Hu, X.W.; Wang, S.J.; Li, S.Q. | |
刊名 | Solid State Communications
![]() |
1996 | |
卷号 | 97期号:11 |
ISSN号 | 0038-1098 |
DOI | 10.1016/0038-1098(95)00821-7 |
URL标识 | 查看原文 |
收录类别 | EI |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4210384 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Chen, Z.Q.,Hu, X.W.,Wang, S.J.,et al. Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements[J]. Solid State Communications,1996,97(11). |
APA | Chen, Z.Q.,Hu, X.W.,Wang, S.J.,&Li, S.Q..(1996).Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements.Solid State Communications,97(11). |
MLA | Chen, Z.Q.,et al."Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements".Solid State Communications 97.11(1996). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论