MICROSTRUCTURE CHANGE IN SIC WHISKERS AFTER HIGH-TEMPERATURE ANNEALING

CORC > 金属研究所 > 中国科学院金属研究所

	MICROSTRUCTURE CHANGE IN SIC WHISKERS AFTER HIGH-TEMPERATURE ANNEALING
	Y. C. Zhou ; X. Chang ; J. Zhou ; F. Xia ; C. H. Shih
刊名	Philosophical Magazine Letters
	1991
卷号	63 期号:1 页码:19-22
关键词	matrix composites
ISSN号	0950-0839
中文摘要	The microstructure of as-received and post-annealed SiC whiskers were investigated by transmission electron microscopy. In the as-received SiC whiskers, the thinner beta-SiC parts were jointed with the one-dimensional disordered parts by {111}, twin boundaries. After annealing, beta-SiC parts became coarser than the one-dimensional disordered parts at 1900-degrees-C and then disappeared at 2000-degrees-C.
原文出处	://WOS:A1991EU52200004
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/39540]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. C. Zhou,X. Chang,J. Zhou,et al. MICROSTRUCTURE CHANGE IN SIC WHISKERS AFTER HIGH-TEMPERATURE ANNEALING[J]. Philosophical Magazine Letters,1991,63(1):19-22.
APA	Y. C. Zhou,X. Chang,J. Zhou,F. Xia,&C. H. Shih.(1991).MICROSTRUCTURE CHANGE IN SIC WHISKERS AFTER HIGH-TEMPERATURE ANNEALING.Philosophical Magazine Letters,63(1),19-22.
MLA	Y. C. Zhou,et al."MICROSTRUCTURE CHANGE IN SIC WHISKERS AFTER HIGH-TEMPERATURE ANNEALING".Philosophical Magazine Letters 63.1(1991):19-22.