PHOTOLUMINESCENCE OF SM DOPED POROUS SILICON - EVIDENCE FOR LIGHT-EMISSION THROUGH LUMINESCENCE-CENTERS IN SIO2 LAYERS

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	PHOTOLUMINESCENCE OF SM DOPED POROUS SILICON - EVIDENCE FOR LIGHT-EMISSION THROUGH LUMINESCENCE-CENTERS IN SIO2 LAYERS
	J. Lin ; L. Z. Zhang ; Y. M. Huang ; B. R. Zhang ; G. G. Qin
刊名	Applied Physics Letters
	1994
卷号	64 期号:24 页码:3282-3284
关键词	visible luminescence excitation intensity mechanism
ISSN号	0003-6951
中文摘要	After oxidation promoted by gamma-ray irradiation, in the photoluminescence (PL) spectra of Sm doped porous silicon (PS), there are three sharp peaks, superimposed on a broad band, with wavelengths near to those of the Sm doped SiO2 [R. Morimo, T. Mizushima, and H. Okumura, J. Electrochem. Soc. 137, 2340 (1990)]. The experimental results indicate that Sm-related luminescence centers can be created within the oxide of porous silicon, and only in porous silicon with high porosity can the Sm-related luminescence be found in the SiO2 layer. This experimental result can be explained by the fact that the excitation of electron-hole pairs occurs in nanoscale silicon, and the recombination occurs at the Sm-related luminescence centers in SiO2 layers covering nanoscale silicon.
原文出处	://WOS:A1994NQ97900027
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/38852]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	J. Lin,L. Z. Zhang,Y. M. Huang,et al. PHOTOLUMINESCENCE OF SM DOPED POROUS SILICON - EVIDENCE FOR LIGHT-EMISSION THROUGH LUMINESCENCE-CENTERS IN SIO2 LAYERS[J]. Applied Physics Letters,1994,64(24):3282-3284.
APA	J. Lin,L. Z. Zhang,Y. M. Huang,B. R. Zhang,&G. G. Qin.(1994).PHOTOLUMINESCENCE OF SM DOPED POROUS SILICON - EVIDENCE FOR LIGHT-EMISSION THROUGH LUMINESCENCE-CENTERS IN SIO2 LAYERS.Applied Physics Letters,64(24),3282-3284.
MLA	J. Lin,et al."PHOTOLUMINESCENCE OF SM DOPED POROUS SILICON - EVIDENCE FOR LIGHT-EMISSION THROUGH LUMINESCENCE-CENTERS IN SIO2 LAYERS".Applied Physics Letters 64.24(1994):3282-3284.