STM observation of oxidation morphology of HOPG and boron-doped HOPG

CORC > 金属研究所 > 中国科学院金属研究所

	STM observation of oxidation morphology of HOPG and boron-doped HOPG
	W. G. Zhang ; H. M. Cheng ; T. S. Xie ; Z. H. Shen ; B. L. Zhou ; H. Q. Ye
刊名	Carbon
	1997
卷号	35 期号:12 页码:1839-1841
关键词	highly oriented graphite gasification oxidation scanning tunneling microscopy catalytic properties
ISSN号	0008-6223
原文出处	://WOS:000071527300020
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/38213]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	W. G. Zhang,H. M. Cheng,T. S. Xie,et al. STM observation of oxidation morphology of HOPG and boron-doped HOPG[J]. Carbon,1997,35(12):1839-1841.
APA	W. G. Zhang,H. M. Cheng,T. S. Xie,Z. H. Shen,B. L. Zhou,&H. Q. Ye.(1997).STM observation of oxidation morphology of HOPG and boron-doped HOPG.Carbon,35(12),1839-1841.
MLA	W. G. Zhang,et al."STM observation of oxidation morphology of HOPG and boron-doped HOPG".Carbon 35.12(1997):1839-1841.