Formation of iodide thin films in non-equilibrium growth

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	Formation of iodide thin films in non-equilibrium growth
	J. Z. Zhang ; X. Y. Ye ; X. D. Yang
刊名	Physica Status Solidi B-Basic Research
	1999
卷号	215 期号:2 页码:1025-1032
关键词	fractal clusters
ISSN号	0370-1972
中文摘要	The morphologies of the deposits SnI2 and CdI2, which formed on the surface of a silicon crystal during vapor-solid transition, were studied. The SnI2 fractal structures and the CdI2 self-organizing structures were observed by scanning electron microscopy. It is most significant that the SnI2 fractal structures were composed of nanograins grown at the advancing front of SnI2 crystal accumulation, and showed a transient from equilibrium to non-equilibrium growth. The transient occurred as the cooling rate was increased up to 1000 K/min. The CdI2 self-organizing sunflower-like structures were composed of CdI2 nanocrystals, and indicated an anomalous growth mechanism. The experimental results suggest that the iodide thin films can give rise to fractal structures or self-organizing structures resulting from non-equilibrium growth processes.
原文出处	://WOS:000083233000020
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/37575]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	J. Z. Zhang,X. Y. Ye,X. D. Yang. Formation of iodide thin films in non-equilibrium growth[J]. Physica Status Solidi B-Basic Research,1999,215(2):1025-1032.
APA	J. Z. Zhang,X. Y. Ye,&X. D. Yang.(1999).Formation of iodide thin films in non-equilibrium growth.Physica Status Solidi B-Basic Research,215(2),1025-1032.
MLA	J. Z. Zhang,et al."Formation of iodide thin films in non-equilibrium growth".Physica Status Solidi B-Basic Research 215.2(1999):1025-1032.