Effects of distribution of induced defects on positron diffusion

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	Effects of distribution of induced defects on positron diffusion
	X. Z. Zhou ; J. Jiang ; C. W. Lung
刊名	Journal of Materials Science & Technology
	2000
卷号	16 期号:1 页码:73-75
ISSN号	1005-0302
中文摘要	The effects of distribution of induced defects on the positron diffusion was studied by using the point-source diffusion model and delta function method.
原文出处	://WOS:000085193800016
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/37298]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	X. Z. Zhou,J. Jiang,C. W. Lung. Effects of distribution of induced defects on positron diffusion[J]. Journal of Materials Science & Technology,2000,16(1):73-75.
APA	X. Z. Zhou,J. Jiang,&C. W. Lung.(2000).Effects of distribution of induced defects on positron diffusion.Journal of Materials Science & Technology,16(1),73-75.
MLA	X. Z. Zhou,et al."Effects of distribution of induced defects on positron diffusion".Journal of Materials Science & Technology 16.1(2000):73-75.