Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation | |
G. Z. Ran ; S. T. Wang ; J. S. Fu ; Z. C. Ma ; W. H. Zong ; G. G. Qin | |
刊名 | Journal of Luminescence |
2001 | |
卷号 | 93期号:1页码:75-80 |
关键词 | electroluminescence luminescence center nanocrystalline irradiation doping porous silicon visible electroluminescence p-si stability |
ISSN号 | 0022-2313 |
中文摘要 | Doping Al into the nanoscale Si-rich SiO2 (NSS) films subsequently annealed at temperatures lower than similar to 700 degreesC made the EL intensity of Au/NSS/p-Si samples increase by a factor of 4-6, but did not change its EL peak wavelength. Doping Al into NSS films subsequently annealed at temperatures higher than similar to 700 degreesC made the EL intensities of Au/NSS/p-Si samples increase by a factor larger than 6 and the EL peaks redshift evidently, gamma -ray irradiation has very similar effects in increasing and redshifting the EL spectra of Au/NSS/p-Si. The currents of Au/NSS/p-Si samples with NSS/p-Si annealed at various temperatures under a definite forward bias were invariant or increased in the gamma ray irradiation process. However, the currents of Au/NSS:Al/p-Si samples with NSS:Al/p-Si annealed at temperatures smaller than similar to 700 degreesC under the same definite forward bias decreased in the gamma -ray irradiation process. The experimental facts can be interpreted qualitatively if the main origin of EL is attributed to defects and/or impurities in the NSS films. (C) 2001 Elsevier Science B.V. All rights reserved. |
原文出处 | |
公开日期 | 2012-04-14 |
内容类型 | 期刊论文 |
源URL | [http://ir.imr.ac.cn/handle/321006/36786] |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | G. Z. Ran,S. T. Wang,J. S. Fu,et al. Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation[J]. Journal of Luminescence,2001,93(1):75-80. |
APA | G. Z. Ran,S. T. Wang,J. S. Fu,Z. C. Ma,W. H. Zong,&G. G. Qin.(2001).Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation.Journal of Luminescence,93(1),75-80. |
MLA | G. Z. Ran,et al."Enhancing electroluminescence from Au/nanoscale Si-rich SiO2 film/p-Si by doping Al into the SiO2 film and gamma-ray irradiation".Journal of Luminescence 93.1(2001):75-80. |
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