4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures

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	4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures
	G. Z. Ran ; W. C. Qin ; Z. C. Ma ; W. H. Zong ; G. G. Qin
刊名	Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
	2001
卷号	173 期号:3 页码:299-303
关键词	porous silicon visible electroluminescence quantum efficiency si structure p-si oxide photoluminescence films
ISSN号	0168-583X
中文摘要	The effects of 3 MeV electron irradiation on electroluminescence (EL) from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures are reported. The SiO2 and Si-rich SiO2 films were deposited on p-Si wafers using the magnetron sputtering technique and then processed by rapid thermal annealing (RTA) at a series of temperatures. The Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures were irradiated by electrons with an energy of 4 Mev and a dose rate of 8.5 x 10(12) cm(-2) s(-1) EL intensities of the two structures as functions of the RTA temperature and electron irradiation time have been studied. For the Au/SiO2/p-Si structure with SiO2/p-Si annealed at 900 degreesC, the EL intensity increased to a maximum in electron irradiation for 20 s, which is larger than that before irradiation by a factor of 3. These experimental results have been discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
原文出处	://WOS:000166324900006
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/36785]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Z. Ran,W. C. Qin,Z. C. Ma,et al. 4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures[J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,2001,173(3):299-303.
APA	G. Z. Ran,W. C. Qin,Z. C. Ma,W. H. Zong,&G. G. Qin.(2001).4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,173(3),299-303.
MLA	G. Z. Ran,et al."4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures".Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 173.3(2001):299-303.