Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering

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	Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering
	G. Z. Ran ; Y. Chen ; W. C. Qin ; J. S. Fu ; Z. C. Ma ; W. H. Zong ; H. Lu ; J. Qin ; G. G. Qin
刊名	Journal of Applied Physics
	2001
卷号	90 期号:11 页码:5835-5837
关键词	molecular-beam epitaxy erbium si photoluminescence diodes
ISSN号	0021-8979
中文摘要	Room-temperature 1.54 mum electroluminescence (EL) was compared for Au/SiO2:Er/n(+)-Si and Au/SiOx:Si:Er/n(+)-Si diodes under reverse bias. The 18 nm thick SiO2:Er and SiOx:Si:Er films were deposited by the magnetron sputtering technique. The maximum of the EL intensity was reached after annealing at 900 degreesC (SiO2:Er) and 800 degreesC (SiOx:Si:Er). The threshold potential of the EL was about 4 and 6 V for the Au/SiOx:Si:Er/n(+)-Si and Au/SiO2:Er/n(+)-Si diodes, respectively. The power efficiency was larger for the Au/SiOx:Si:Er/n(+)-Si diode than that for the Au/SiO2:Er/n(+)-Si diode by six times. Our experimental results demonstrate that the existence of Si nanoclusters reduces the threshold potentials of the EL and strongly enhances the power efficiency for Er3+ EL. (C) 2001 American Institute of Physics.
原文出处	://WOS:000172129200062
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/36783]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Z. Ran,Y. Chen,W. C. Qin,et al. Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering[J]. Journal of Applied Physics,2001,90(11):5835-5837.
APA	G. Z. Ran.,Y. Chen.,W. C. Qin.,J. S. Fu.,Z. C. Ma.,...&G. G. Qin.(2001).Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering.Journal of Applied Physics,90(11),5835-5837.
MLA	G. Z. Ran,et al."Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering".Journal of Applied Physics 90.11(2001):5835-5837.