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	Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-doped Si-rich SiO2 films deposited by magnetron sputtering
	G. Z. Ran ; Y. Chen ; Z. C. Ma ; W. H. Zong ; L. Q. Xie ; C. G. Guo ; G. C. Qin
刊名	Chinese Physics Letters
	2001
卷号	18期号:7页码:986-988
关键词	silicon-oxide electroluminescence nanocrystals sio2-films luminescence
ISSN号	0256-307X
中文摘要	Room-temperature 1.54 mum photoluminescence (PL) is observed from Er-doped Si-rich SiO2 (SiO2:Si:Er) films deposited by using the magnetron sputtering technique. To determine the optimum Si content in the SiO2:Si:Er films, the percentage area of the Si target in the composite SiO2-Si-Er target was changed from 0, to 10%, 20% and 30%. The percentage area of the Er target was fixed at 1%. It is found that the optimum annealing temperatures for Er3+ luminescence intensities are 900 degreesC for the SiO2:Er film and 900, 800 and 700 degreesC for the SiO2:Si:Er films containing 10%, 20% and 30% excess-Si (percentage areas of Si target), respectively The SiO2:Si:Er film containing 20% excess-Si and annealed at 800 degrees C has the most intense FL.
原文出处	://WOS:000170056200047
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/36782]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Z. Ran,Y. Chen,Z. C. Ma,et al. Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-doped Si-rich SiO2 films deposited by magnetron sputtering[J]. Chinese Physics Letters,2001,18(7):986-988.
APA	G. Z. Ran.,Y. Chen.,Z. C. Ma.,W. H. Zong.,L. Q. Xie.,...&G. C. Qin.(2001).Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-doped Si-rich SiO2 films deposited by magnetron sputtering.Chinese Physics Letters,18(7),986-988.
MLA	G. Z. Ran,et al."Dependence of 1.54 mu m photoluminescence on excess-Si degrees of Er-doped Si-rich SiO2 films deposited by magnetron sputtering".Chinese Physics Letters 18.7(2001):986-988.

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