Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure

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	Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure
	Y. Chen ; G. Z. Ran ; Y. K. Sun ; Y. B. Wang ; J. S. Fu ; W. T. Chen ; Y. Y. Gong ; D. X. Wu ; Z. C. Ma ; W. H. Zong ; G. G. Qin
刊名	Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
	2001
卷号	183 期号:3-4 页码:305-310
关键词	silicon-dioxide films visible electroluminescence optical-properties photoluminescence enhancement sio2-films glass
ISSN号	0168-583X
中文摘要	Si-rich SiO2 films were deposited on p-Si substrates using the magnetron sputtering technique and then implanted by Si, Ge or Ar ions. Electroluminescence (EL) was observed from the semitransparent Au film/ion-implanted Si-rich SiO2/p-Si diodes with the ion-implanted Si-rich SiO2/p-Si annealed at 1050 degreesC. In comparison with the A u/non-implanted Si-rich SiO2/p-Si diode, whose EL spectrum has a main peak at 1.8 eV and a shoulder at 2.4 eV, the Au/Si-implanted Si-rich SiO2/p-Si diode has an EL spectrum with the 1.8 and 2.4 eV peaks enhanced in intensity by factors of 2 and 8, respectively. Both EL spectra of Au/Ge-implanted Si-rich SiO2/p-Si diode Au/Ar-implanted Si-rich SiO2/p-Si diode have new strong peaks at 2.2 eV. The mechanisms for EL intensity enhancement and appearance of new EL peaks caused by ion-implantation are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
原文出处	://WOS:000171341000017
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/36610]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. Chen,G. Z. Ran,Y. K. Sun,et al. Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure[J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,2001,183(3-4):305-310.
APA	Y. Chen.,G. Z. Ran.,Y. K. Sun.,Y. B. Wang.,J. S. Fu.,...&G. G. Qin.(2001).Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,183(3-4),305-310.
MLA	Y. Chen,et al."Effects of Si, Ge and Ar ion-implantation on EL from Au/Si-rich SiO2/p-Si structure".Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 183.3-4(2001):305-310.