InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm | |
Wei, Wen-Qi; Wang, Jian-Huan; Zhang, Bin; Zhang, Jie-Yin; Wang, Hai-Ling; Feng, Qi; Xu, Hong-Xing; Wang, Ting; Zhang, Jian-Jun | |
刊名 | APPLIED PHYSICS LETTERS |
2018 | |
卷号 | 113期号:5 |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.5043169 |
URL标识 | 查看原文 |
收录类别 | SCIE ; EI |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4156286 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Wei, Wen-Qi,Wang, Jian-Huan,Zhang, Bin,et al. InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm[J]. APPLIED PHYSICS LETTERS,2018,113(5). |
APA | Wei, Wen-Qi.,Wang, Jian-Huan.,Zhang, Bin.,Zhang, Jie-Yin.,Wang, Hai-Ling.,...&Zhang, Jian-Jun.(2018).InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm.APPLIED PHYSICS LETTERS,113(5). |
MLA | Wei, Wen-Qi,et al."InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm".APPLIED PHYSICS LETTERS 113.5(2018). |
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