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InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm
Wei, Wen-Qi; Wang, Jian-Huan; Zhang, Bin; Zhang, Jie-Yin; Wang, Hai-Ling; Feng, Qi; Xu, Hong-Xing; Wang, Ting; Zhang, Jian-Jun
刊名APPLIED PHYSICS LETTERS
2018
卷号113期号:5
ISSN号0003-6951
DOI10.1063/1.5043169
URL标识查看原文
收录类别SCIE ; EI
语种英语
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4156286
专题武汉大学
推荐引用方式
GB/T 7714
Wei, Wen-Qi,Wang, Jian-Huan,Zhang, Bin,et al. InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm[J]. APPLIED PHYSICS LETTERS,2018,113(5).
APA Wei, Wen-Qi.,Wang, Jian-Huan.,Zhang, Bin.,Zhang, Jie-Yin.,Wang, Hai-Ling.,...&Zhang, Jian-Jun.(2018).InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm.APPLIED PHYSICS LETTERS,113(5).
MLA Wei, Wen-Qi,et al."InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm".APPLIED PHYSICS LETTERS 113.5(2018).
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