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	Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs
	Li, Yi; Guo, Yaxiong; Zhang, Kai; Zou, Xuming; Wang, Jingli; Kong, Yuechan; Chen, Tangsheng; Jiang, Changzhong; Fang, Guojia; Liu, Chuansheng
刊名	IEEE Transactions on Electron Devices
	2017
卷号	64期号:8
ISSN号	0018-9383
DOI	10.1109/TED.2017.2712782
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4156102
专题	武汉大学
推荐引用方式 GB/T 7714	Li, Yi,Guo, Yaxiong,Zhang, Kai,et al. Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs[J]. IEEE Transactions on Electron Devices,2017,64(8).
APA	Li, Yi.,Guo, Yaxiong.,Zhang, Kai.,Zou, Xuming.,Wang, Jingli.,...&Liao, Lei.(2017).Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs.IEEE Transactions on Electron Devices,64(8).
MLA	Li, Yi,et al."Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs".IEEE Transactions on Electron Devices 64.8(2017).

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