Improved light emission from n-ZnO/p-Si heterojunction with HfO2as an electron blocking layer | |
Chen, Zhao; Li, Borui; Mo, Xiaoming; Zhou, Kai; Li, Songzhan; Song, Zengcai; Lei, Hongwei; Wen, Jian; Zhu, Ziqiang; Fang, Guojia | |
刊名 | Journal of Luminescence
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2017 | |
卷号 | 184 |
ISSN号 | 0022-2313 |
DOI | 10.1016/j.jlumin.2016.12.033 |
URL标识 | 查看原文 |
收录类别 | EI |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4155002 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Chen, Zhao,Li, Borui,Mo, Xiaoming,et al. Improved light emission from n-ZnO/p-Si heterojunction with HfO2as an electron blocking layer[J]. Journal of Luminescence,2017,184. |
APA | Chen, Zhao.,Li, Borui.,Mo, Xiaoming.,Zhou, Kai.,Li, Songzhan.,...&Fang, Guojia.(2017).Improved light emission from n-ZnO/p-Si heterojunction with HfO2as an electron blocking layer.Journal of Luminescence,184. |
MLA | Chen, Zhao,et al."Improved light emission from n-ZnO/p-Si heterojunction with HfO2as an electron blocking layer".Journal of Luminescence 184(2017). |
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